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Tutorial Speaker Name: Simon Kim Affiliate & Title : System Application Engineer Email: Simon.kim@infineon.com |
- Electric propulsion needs high voltage wide bandgap product for reducing current, enough voltage margin, topology simple and high efficiency
- Design & measurement consideration for High voltage (e.g. 2, 2.3 & 3.3 kV) SiC MOSFET with gate driver IC must be well accrued for power electronic engineer
High voltage Sic MOSFET’s application and characteristic etc., composed of Gen 1& 2’s char., the difference from low voltage SiC MOSFET, the measurement-based simulation, the selection of voltage and cooling for cosmic radiation and altitude, will be dealt at Part I. Design consideration for high voltage SiC MOSFET with gate driver IC, composed of principal design with gate driver, measurement example, high voltage SiC MOSFET setup and measurement, will be taught at Part II.
He has 21 years of experience in power electronics. He is Principal Engineer in the SAE team, Infineon Technologies. His expertise includes inverter design, focusing on e-mobility, e.g. UAM, propulsion inverter. In previous, he was a researcher and Software Engineer for 6 years in robotics and automation application.
In both ITEC+EATS 2025 & 2026, he has experiences to present two short courses about SiC MOSFET design with Gate driver IC for each 3 hours